Product Datasheet Search Results:
4 Pages, 27 KB, Original- VN0640N3
- Supertex, Inc.
- N-Channel Enhancement-Mode Vertical DMOS FET
Product Details Search Results:
Supertex.com/VN0640N3
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","JESD-609 Code":"e0","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Drain Current-Max (Abs) (ID)":"0.2500 A","Sub Category":"FET General Purpose Power","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source...
1774 Bytes - 07:33:20, 30 September 2024
Supertex.com/VN0640N3P001
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"400 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transist...
1519 Bytes - 07:33:20, 30 September 2024
Supertex.com/VN0640N3P002
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"400 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transist...
1521 Bytes - 07:33:20, 30 September 2024
Supertex.com/VN0640N3P003
{"Terminal Form":"THROUGH-HOLE","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"400 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"NO","Operating Mode":"ENHANCEME...
1443 Bytes - 07:33:20, 30 September 2024
Supertex.com/VN0640N3P004
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"400 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transist...
1520 Bytes - 07:33:20, 30 September 2024
Supertex.com/VN0640N3P005
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"400 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transist...
1521 Bytes - 07:33:20, 30 September 2024
Supertex.com/VN0640N3P006
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"400 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transist...
1521 Bytes - 07:33:20, 30 September 2024
Supertex.com/VN0640N3P007
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"400 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transist...
1518 Bytes - 07:33:20, 30 September 2024
Supertex.com/VN0640N3P008
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"400 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transist...
1517 Bytes - 07:33:20, 30 September 2024
Supertex.com/VN0640N3P011
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"400 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transist...
1519 Bytes - 07:33:20, 30 September 2024
Supertex.com/VN0640N3P012
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"400 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transist...
1517 Bytes - 07:33:20, 30 September 2024
