VI1010
P-Channel Enhancement MOSFET

From UNISEM

StatusDiscontinued
@(VDS) (V) (Test Condition)40
@V(DS) (V) (Test Condition)10
Absolute Max. Power Diss. (W)112m
C(iss) Max. (F)1.1p
I(D) Abs. Drain Current (A)25m
I(DSS) Min. (A)10n
I(GSS) Max. (A)1.0n
MilitaryN
PackageN/A
V(BR)DSS (V)50
V(BR)GSS (V)40
g(fs) Min. (S) Trans. conduct.500u

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