RN2110MFV(TPL3) TRANS PREBIAS PNP 150MW VESM
From Toshiba Semiconductor and Storage
| Category | Discrete Semiconductor Products |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Datasheets | RN2110,11 - |
| Family | Transistors (BJT) - Single, Pre-Biased |
| Frequency - Transition | - |
| Mounting Type | Surface Mount |
| Package / Case | SOT-723 |
| Packaging | Tape & Reel (TR) |
| Power - Max | 100mW |
| Product Photos | VESM |
| Resistor - Base (R1) (Ohms) | 4.7k |
| Resistor - Emitter Base (R2) (Ohms) | - |
| Series | - |
| Standard Package | 8,000 |
| Supplier Device Package | VESM |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
