RN1701JE(TE85L,F) TRANS 2NPN PREBIAS 0.1W ESV
From Toshiba Semiconductor and Storage
| Category | Discrete Semiconductor Products |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Datasheets | RN1701JE-06JE - |
| Family | Transistors (BJT) - Arrays, Pre-Biased |
| Frequency - Transition | 250MHz |
| Mounting Type | Surface Mount |
| Online Catalog | NPN Pre-Biased Transistor Arrays |
| Other Names | RN1701JE(TE85LF)TR |
| Package / Case | SOT-553 |
| Packaging | Tape & Reel (TR) |
| Power - Max | 100mW |
| Product Photos | SOT-553 |
| Resistor - Base (R1) (Ohms) | 4.7k |
| Resistor - Emitter Base (R2) (Ohms) | 4.7k |
| Series | - |
| Standard Package | 4,000 |
| Supplier Device Package | ESV |
| Transistor Type | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
