1SS367,H3F DIODE SCHOTTKY 10V 100MA SC76
From Toshiba Semiconductor and Storage
| Capacitance @ Vr, F | 40pF @ 0V, 1MHz |
| Category | Discrete Semiconductor Products |
| Current - Average Rectified (Io) | 100mA |
| Current - Reverse Leakage @ Vr | 20µA @ 10V |
| Datasheets | 1SS367 - |
| Diode Type | Schottky |
| Family | Diodes, Rectifiers - Single |
| Mounting Type | Surface Mount |
| Online Catalog | Schottky Barrier Diodes |
| Operating Temperature - Junction | 125°C (Max) |
| Other Names | 1SS367 (TPH3,F) 1SS367(TPH3,F) 1SS367,H3F(B 1SS367,H3F(T 1SS367H3FTR 1SS367TPH3F 1SS367TPH3FTR 1SS367TPH3FTR-ND |
| Package / Case | SC-76, SOD-323 |
| Packaging | Tape & Reel (TR) |
| Product Photos | CUS10F30,H3F(T |
| Reverse Recovery Time (trr) | - |
| Series | - |
| Speed | Small Signal = |
| Standard Package | 3,000 |
| Supplier Device Package | * |
| Voltage - DC Reverse (Vr) (Max) | 10V |
| Voltage - Forward (Vf) (Max) @ If | 500mV @ 100mA |
