TPH4R003NL,L1Q MOSFET Power moSFET N-ch single VDSS30V
From Toshiba
Brand | Toshiba |
Channel Mode | Enhancement |
Configuration | Single |
Fall Time | 3.5 ns |
Id - Continuous Drain Current | 68 A |
Manufacturer | Toshiba |
Mounting Style | SMD/SMT |
Package / Case | SOP-8 |
Packaging | Reel |
Pd - Power Dissipation | 36 W |
Product Category | MOSFET |
Qg - Gate Charge | 14.8 nC |
Rds On - Drain-Source Resistance | 6.2 mOhms |
Rise Time | 4.5 ns |
RoHS | Details |
Series | U-MOSVIII |
Transistor Polarity | N-Channel |
Typical Turn-Off Delay Time | 19 ns |
Vds - Drain-Source Breakdown Voltage | 30 V |
Vgs - Gate-Source Breakdown Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.3 V |