SSM4K27CT
500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

From Toshiba America Electronic Components, Inc.

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min20 V
Drain Current-Max (ID)0.5000 A
Drain-source On Resistance-Max0.2600 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package Description2-1M1A, CST4, 4 PIN
Number of Elements1
Number of Terminals4
Operating ModeENHANCEMENT
Package Body MaterialUNSPECIFIED
Package ShapeRECTANGULAR
Package StyleCHIP CARRIER
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormNO LEAD
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

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