SF150B27 Silicon Controlled Rectifier
From Toshiba
@I(T) (A) (Test Condition) | 470 |
@Temp. (°C) (Test Condition) | 125 |
I(D) Max. (A) Leakage Current | 15m |
I(GT) Max. (A) | 150m |
I(H) Max.(A) Holding Current | 200m |
I(T) Max.(A) On-state Current | 150± |
I(TSM) Max. (A) | 2.5k |
Military | N |
Package | TO-200var37 |
V(DRM) Max.(V)Rep.Pk.Off Volt. | 100 |
V(GT) Max.(V) | 3.0 |
V(T) Max. (V) | 1.5 |
dv/dt Min. (V/us) | 200 |
t(q) Typ. (s) | 40uò |