SF150B27
Silicon Controlled Rectifier

From Toshiba

@I(T) (A) (Test Condition)470
@Temp. (°C) (Test Condition)125
I(D) Max. (A) Leakage Current15m
I(GT) Max. (A)150m
I(H) Max.(A) Holding Current200m
I(T) Max.(A) On-state Current150±
I(TSM) Max. (A)2.5k
MilitaryN
PackageTO-200var37
V(DRM) Max.(V)Rep.Pk.Off Volt.100
V(GT) Max.(V)3.0
V(T) Max. (V)1.5
dv/dt Min. (V/us)200
t(q) Typ. (s)40uò

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