MT3S16U(TE85L,F) RF Bipolar Transistors RF 50mW 5.5dB 10V USM 60mA 2GHz
From Toshiba
| Brand | Toshiba |
| Collector- Emitter Voltage VCEO Max | 5 V |
| Configuration | Single |
| Continuous Collector Current | 60 mA |
| DC Collector/Base Gain hfe Min | 80 |
| Emitter- Base Voltage VEBO | 2 V |
| Factory Pack Quantity | 3000 |
| Frequency | 4 GHz (Typ) |
| Manufacturer | Toshiba |
| Maximum Operating Temperature | + 125 C |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SC-70-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 100 mW |
| Product Category | RF Bipolar Transistors |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | NPN |
| Transistor Type | Bipolar |
