MIG50J901H
Complex Bridge IGBT Power Module

From Toshiba

@I(C) (A) (Test Condition)50
@V(CES) (V) (Test Condition)600
@V(GE) (Test Condition)15
@V(GES) (V) (Test Condition)20
C(iee) (Max) (F)3.1n
Circuits Per Package1
I(C) Abs.(A) Collector Current50
I(CES) Min. (A)1.0m
I(GES) Max. (A)20u
PackageMODULE-var
V(BR)CES (V)600
V(BR)GES (V)20
V(CE)sat Max.(V)4.0
t(d)off Max. (s) Off time600n
t(f) Max. (s) Fall time.300n
t(r) Max. (s) Rise time240n
td(on) Max (s) On time delay160n

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