MIG50J901H Complex Bridge IGBT Power Module
From Toshiba
@I(C) (A) (Test Condition) | 50 |
@V(CES) (V) (Test Condition) | 600 |
@V(GE) (Test Condition) | 15 |
@V(GES) (V) (Test Condition) | 20 |
C(iee) (Max) (F) | 3.1n |
Circuits Per Package | 1 |
I(C) Abs.(A) Collector Current | 50 |
I(CES) Min. (A) | 1.0m |
I(GES) Max. (A) | 20u |
Package | MODULE-var |
V(BR)CES (V) | 600 |
V(BR)GES (V) | 20 |
V(CE)sat Max.(V) | 4.0 |
t(d)off Max. (s) Off time | 600n |
t(f) Max. (s) Fall time. | 300n |
t(r) Max. (s) Rise time | 240n |
td(on) Max (s) On time delay | 160n |