MIG30J906H Three-Phase Bridge IGBT Power Module - W/ 3-Phase Diode Bridge
From Toshiba
@I(C) (A) (Test Condition) | 30 |
@V(CES) (V) (Test Condition) | 600 |
@V(GE) (Test Condition) | 15 |
@V(GES) (V) (Test Condition) | 20 |
Absolute Max. Power Diss. (W) | 125 |
Circuits Per Package | 3 |
I(C) Abs.(A) Collector Current | 35 |
I(CES) Min. (A) | 1.0m |
I(GES) Max. (A) | 500n |
Package | MODULE-var |
V(BR)CES (V) | 600 |
V(BR)GES (V) | 20 |
V(CE)sat Max.(V) | 2.7 |
t(f) Max. (s) Fall time. | 300n |
t(r) Max. (s) Rise time | 200n |