MIG30J906EA
Three-Phase Bridge IGBT Power Module - W/ 3-Phase Diode Bridge

From Toshiba

@I(C) (A) (Test Condition)30
@V(CES) (V) (Test Condition)600
@V(GE) (Test Condition)15
@V(GES) (V) (Test Condition)20
Absolute Max. Power Diss. (W)125
Circuits Per Package3
I(C) Abs.(A) Collector Current35
I(CES) Min. (A)1.0m
I(GES) Max. (A)500n
PackageMODULE-var
V(BR)CES (V)600
V(BR)GES (V)20
V(CE)sat Max.(V)2.8
t(f) Max. (s) Fall time.300n
t(r) Max. (s) Rise time200n

External links