MIG25Q806HA Three-Phase Bridge IGBT Power Module - W/ 3-Phase Diode Bridge
From Toshiba
| @I(C) (A) (Test Condition) | 25 |
| @V(CES) (V) (Test Condition) | 1.2k |
| @V(GE) (Test Condition) | 15 |
| @V(GES) (V) (Test Condition) | 20 |
| Absolute Max. Power Diss. (W) | 200 |
| Circuits Per Package | 3 |
| I(C) Abs.(A) Collector Current | 35 |
| I(CES) Min. (A) | 500u |
| I(GES) Max. (A) | 500n |
| Package | MODULE-var |
| V(BR)CES (V) | 1.2k |
| V(BR)GES (V) | 20 |
| V(CE)sat Max.(V) | 3.2 |
| t(f) Max. (s) Fall time. | 100n |
| t(r) Max. (s) Rise time | 150n |
