MIG20J855E Three-Phase Bridge IGBT Power Module
From Toshiba
| @I(C) (A) (Test Condition) | 20 |
| @V(CES) (V) (Test Condition) | 600 |
| @V(GE) (Test Condition) | 15 |
| @V(GES) (V) (Test Condition) | 20 |
| Absolute Max. Power Diss. (W) | 60 |
| Circuits Per Package | 1 |
| I(C) Abs.(A) Collector Current | 20 |
| I(CES) Min. (A) | 1.0m |
| I(GES) Max. (A) | 500n |
| Package | MODULE-var |
| V(BR)CES (V) | 600 |
| V(BR)GES (V) | 20 |
| V(CE)sat Max.(V) | 2.8 |
| t(f) Max. (s) Fall time. | 300n |
| t(r) Max. (s) Rise time | 200n |
