MG50Q6ES11
50 A, 1200 V, N-CHANNEL IGBT

From Toshiba America Electronic Components, Inc.

StatusACTIVE
Channel TypeN-CHANNEL
Collector Current-Max (IC)50 A
Collector-emitter Voltage-Max1200 V
ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Number of Elements6
Number of Terminals19
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Terminal FormUNSPECIFIED
Terminal PositionUPPER
Transistor ApplicationPOWER CONTROL
Transistor Element MaterialSILICON
Transistor TypeINSULATED GATE BIPOLAR

External links