MG50Q6ES11 50 A, 1200 V, N-CHANNEL IGBT
From Toshiba America Electronic Components, Inc.
| Status | ACTIVE |
| Channel Type | N-CHANNEL |
| Collector Current-Max (IC) | 50 A |
| Collector-emitter Voltage-Max | 1200 V |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
| Number of Elements | 6 |
| Number of Terminals | 19 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Terminal Form | UNSPECIFIED |
| Terminal Position | UPPER |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Transistor Type | INSULATED GATE BIPOLAR |
