HN2S03T 0.05 A, 2 ELEMENT, SILICON, SIGNAL DIODE
From Toshiba America Electronic Components, Inc.
| Status | ACTIVE |
| Average Forward Current-Max | 0.0500 A |
| Configuration | SEPARATE, 2 ELEMENTS |
| Diode Element Material | SILICON |
| Diode Type | SIGNAL DIODE |
| Mfr Package Description | TESQ-4 |
| Number of Elements | 2 |
| Number of Terminals | 4 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Power Dissipation Limit-Max | 0.0700 W |
| Surface Mount | Yes |
| Technology | SCHOTTKY |
| Terminal Finish | TIN LEAD |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
