2SK3658
2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

From Toshiba America Electronic Components, Inc.

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min60 V
Drain Current-Max (ID)2 A
Drain-source On Resistance-Max0.4400 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package Description2-5K1B, SC-62, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Surface MountYes
Terminal FinishTIN LEAD
Terminal FormFLAT
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

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