2SK3498(2-7J1B)
1 A, 450 V, 5.5 ohm, N-CHANNEL, Si, POWER, MOSFET

From Toshiba America Electronic Components, Inc.

StatusACTIVE
Avalanche Energy Rating (Eas)113 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min450 V
Drain Current-Max (ID)1 A
Drain-source On Resistance-Max5.5 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package Description2-7J1B, 3 PIN
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)3 A
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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