2SJ465
2000 mA, 16 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

From Toshiba America Electronic Components, Inc.

StatusACTIVE
Case ConnectionDRAIN
Channel TypeP-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min16 V
Drain Current-Max (ID)2 A
Drain-source On Resistance-Max0.7100 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package Description2-5K1B, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max0.5000 W
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormFLAT
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

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