2SJ305
200 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236

From Toshiba America Electronic Components, Inc.

StatusACTIVE
Channel TypeP-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min30 V
Drain Current-Max (ID)0.2000 A
Drain-source On Resistance-Max4 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package Description2-3F1F, S-MINI, TO-236MOD, SC-59, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max0.2000 W
Surface MountYes
Terminal FinishTIN LEAD
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

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