2SC5087R(TE85L,F)
RF Bipolar Transistors RF Device VHF/UHF 12V 150mW 13.5dB

From Toshiba

BrandToshiba
Collector- Emitter Voltage VCEO Max12 V
ConfigurationSingle
Continuous Collector Current80 mA
DC Collector/Base Gain hfe Min120
Emitter- Base Voltage VEBO3 V
Factory Pack Quantity3000
Frequency8 GHz (Typ)
ManufacturerToshiba
Maximum Operating Temperature+ 125 C
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSMQ-4
PackagingReel
Pd - Power Dissipation150 mW
Product CategoryRF Bipolar Transistors
RoHSDetails
TechnologySi
Transistor PolarityNPN
Transistor TypeBipolar

External links