2SA2120-O(Q)
Bipolar Transistors - BJT Transistor PNP 200V 12A

From Toshiba

BrandToshiba
Collector- Base Voltage VCBO200 V
Collector- Emitter Voltage VCEO Max200 V
ConfigurationSingle
DC Collector/Base Gain hfe Min80 at 1 A at 5 V
Emitter- Base Voltage VEBO5 V
Factory Pack Quantity50
Gain Bandwidth Product fT25 MHz (Typ)
ManufacturerToshiba
Maximum DC Collector Current12 A
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Mounting StyleThrough Hole
Package / CaseTO-3P
Pd - Power Dissipation200000 mW
Product CategoryBipolar Transistors - BJT
RoHSDetails
Transistor PolarityPNP

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