TPS1101DG4
MOSFET P-CH 15V 2.3A 8-SOIC

From Texas Instruments

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C2.3A (Ta)
DatasheetsTPS1101, TPS1101Y
Drain to Source Voltage (Vdss)15V
FET FeatureStandard
FET TypeMOSFET P-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs11.25nC @ 10V
Input Capacitance (Ciss) @ Vds-
Manufacturer Product PageTPS1101DG4 Specifications
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
PackagingTube
Power - Max791mW
Product Photos8-SOIC
Rds On (Max) @ Id, Vgs90 mOhm @ 2.5A, 10V
Series-
Standard Package75
Supplier Device Package8-SOIC
Vgs(th) (Max) @ Id1.5V @ 250µA

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