TSM3900DCX6RF
2 A, 20 V, 0.055 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

From Taiwan Semiconductor Co., Ltd.

StatusDISCONTINUED
Channel TypeN-CHANNEL
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min20 V
Drain Current-Max (ID)2 A
Drain-source On Resistance-Max0.0550 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionROHS COMPLIANT PACKAGE-6
Number of Elements2
Number of Terminals6
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max2 W
Pulsed Drain Current-Max (IDM)8 A
Surface MountYes
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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