Product Datasheet Search Results:
4 Pages, 130 KB, Original- TIM7785-8UL
- Toshiba America Electronic Components, Inc.
- X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
Product Details Search Results:
Toshiba.co.jp/TIM7785-8UL
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Drain Current-Max (ID)":"7 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"15 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case C...
1510 Bytes - 06:32:04, 26 November 2024
Toshiba.co.jp/TIM7785-8UL/T
{"Category":"JFET","Maximum Drain Source Voltage":"15 V","Description":"Value","Maximum Continuous Drain Current":"7000 mA","Maximum Gate Source Voltage":"-5 V","Mounting":"Screw","Package":"32-11D1B","Operating Temperature":"-65 to 175 \u00b0C","Configuration":"Single","Manufacturer":"Toshiba"}...
1071 Bytes - 06:32:04, 26 November 2024
