Product Datasheet Search Results:

TIM5964-8SL.pdf8 Pages, 559 KB, Original
TIM5964-8SL-422.pdf4 Pages, 99 KB, Original
TIM5964-8SL.pdf4 Pages, 98 KB, Original
TIM5964-8SL
Toshiba
Trans JFET 15V 7A GaAs 3-Pin 2-11D1B

Product Details Search Results:

Toshiba.co.jp/TIM5964-8SL
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Drain Current-Max (ID)":"7 A","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"15 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Package Description...
1464 Bytes - 06:23:02, 26 November 2024
Toshiba.co.jp/TIM5964-8SL-031
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Transistor Type":"RF POWER"}...
824 Bytes - 06:23:02, 26 November 2024
Toshiba.co.jp/TIM5964-8SL-251
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"2-11D1B, 2 PIN","Terminal Form":"FLAT","Package Style":"FLANGE MOUNT","Terminal Position":"DUAL","Transistor Type":"RF POWER","Package Shape":"RECTANGULAR","Number of Terminals":"2","Surface Mount":"Yes"}...
1080 Bytes - 06:23:02, 26 November 2024
Toshiba.co.jp/TIM5964-8SL251
{"@V(DS) (V) (Test Condition)":"3.0","@V(DD) (V) (Test Condition)":"10","Power Gain Min. (dB)":"8.0","Semiconductor Material":"GaAs","I(DSS) Max. (A)":"7.0","Package":"SOT-469var","V(BR)DSS (V)":"15","P(D) Max.(W) Power Dissipation":"37.5","@Temp (°C) (Test Condition)":"25","V(GS)off Max. (V)":"1.0","I(D) Abs. Drain Current (A)":"7.0","@Freq. (Hz) (Test Condition)":"5.9G","V(BR)GSS (V)":"5.0"}...
902 Bytes - 06:23:02, 26 November 2024
Toshiba.co.jp/TIM5964-8SL-422
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Drain Current-Max (ID)":"7 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"15 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case C...
1534 Bytes - 06:23:02, 26 November 2024

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