Datasheet.Directory

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"15 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Package Descriptio...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Transistor Type":"RF POWER","Operating Mode":"DEPLETION","Channel Type":"N-CHANNEL","Highest Frequency Band":"C BAND","FET Technology":"JUNCTION","Transistor Element Material":"SILICON"}...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"2-16G1B, 3 PIN","Terminal Form":"FLAT","Package Style":"FLANGE MOUNT","Terminal Position":"DUAL","Transistor Type":"RF POWER","Package Shape":"RECTANGULAR","Number of Terminals":"2","Surface Mount":"Yes"}...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"2-16G1B, 2 PIN","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Drain Current-Max (ID)":"14 A","Transistor Element Material":"SILICON","Highest Frequency Band":"C BAND","Number of Elements":"1","Case Connection":"SOURCE","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"R...

{"@V(DS) (V) (Test Condition)":"3.0","@V(DD) (V) (Test Condition)":"10","Power Gain Min. (dB)":"8.0","Semiconductor Material":"GaAs","I(DSS) Max. (A)":"14","Package":"SOT-469var","V(BR)DSS (V)":"15","P(D) Max.(W) Power Dissipation":"75","@Temp (°C) (Test Condition)":"25","V(GS)off Max. (V)":"4.0","I(D) Abs. Drain Current (A)":"14","@Freq. (Hz) (Test Condition)":"5.9G","V(BR)GSS (V)":"5.0"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Drain Current-Max (ID)":"14 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"15 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOUR...

{"Category":"JFET","Maximum Drain Source Voltage":"15 V","Description":"Value","Maximum Continuous Drain Current":"14000 mA","Maximum Gate Source Voltage":"-5 V","Mounting":"Screw","Package":"32-16G1B","Operating Temperature":"-65 to 175 \u00b0C","Configuration":"Single","Manufacturer":"Toshiba"}...