Product Datasheet Search Results:

APTGF125X60TE3.pdf3 Pages, 219 KB, Original
APTGF150X60TE3.pdf3 Pages, 219 KB, Original
APTGF150X60TE3G.pdf5 Pages, 295 KB, Original
APTGF150X60TE3G
Advanced Power Technology
3 Phase bridge NPT IGBT Power Module
APTGF50X120TE3.pdf3 Pages, 218 KB, Original
APTGF90X60TE3.pdf3 Pages, 222 KB, Original
APTGS50X170TE3.pdf3 Pages, 219 KB, Original
APTGS75X170TE3.pdf3 Pages, 219 KB, Original
APTGT100X120TE3.pdf3 Pages, 235 KB, Original
APTGT150X120TE3.pdf3 Pages, 238 KB, Original
APTGT75X120TE3.pdf3 Pages, 235 KB, Original
SQF-P10S2-4G-CTE3.pdf1 Pages, 544 KB, Original
SQF-P10S2-4G-CTE3
Advantech
CARD, COMPACT FLASH, SLC, 4GB, UDMA
ATE3201CI.pdf1 Pages, 348 KB, Original

Product Details Search Results:

Advantech.com/SQF-P10S2-4G-CTE3
{"Module Interface:":"-","SVHC:":"To Be Advised","Memory Type:":"Flash","Memory Size:":"4 GB","Speed:":"-"}...
928 Bytes - 19:36:45, 23 November 2024
Aecom.com/J12TE3-3S8R01M
{"Spectral Response High (m)":"3.6u","Spectral Response Low (m)":"1.0u","Semiconductor Material":"InAs","Photosensitive Area (mm2)":"0.78","Package":"CanF-20","Re Min.(A/W) Responsivity":"1.2","NEP Max.(W/(Hz)1/2)":"1.5p","C(T) Max. (F) Capacitance":"400p"}...
806 Bytes - 19:36:45, 23 November 2024
Aecom.com/J12TE3-66D-R01M
{"Spectral Response High (m)":"3.8u","Spectral Response Low (m)":"1.0u","Semiconductor Material":"InAs","Photosensitive Area (mm2)":"1.0","@Wavelength(m)(Test Condition)":"3.4u","Package":"TO-66var","Re Min.(A/W) Responsivity":"1.5","NEP Max.(W/(Hz)1/2)":".05","C(T) Max. (F) Capacitance":"400p"}...
852 Bytes - 19:36:45, 23 November 2024
Aecom.com/J12TE3-66D-R02M
{"Spectral Response High (m)":"3.8u","Spectral Response Low (m)":"1.0u","Semiconductor Material":"InAs","Photosensitive Area (mm2)":"2.0","@Wavelength(m)(Test Condition)":"3.4u","Package":"TO-66var","Re Min.(A/W) Responsivity":"1.5","NEP Max.(W/(Hz)1/2)":".07","C(T) Max. (F) Capacitance":"400p"}...
852 Bytes - 19:36:45, 23 November 2024
Aecom.com/J12TE3-66D-R250U
{"Spectral Response High (m)":"3.8u","Spectral Response Low (m)":"1.0u","Semiconductor Material":"InAs","Photosensitive Area (mm2)":".25","@Wavelength(m)(Test Condition)":"3.4u","Package":"TO-66var","Re Min.(A/W) Responsivity":"1.5","NEP Max.(W/(Hz)1/2)":".01","C(T) Max. (F) Capacitance":"50p"}...
856 Bytes - 19:36:45, 23 November 2024
Aecom.com/J12TE3-66S-R01M
{"Spectral Response High (m)":"3.6u","Spectral Response Low (m)":"1.0u","Semiconductor Material":"InAs","Photosensitive Area (mm2)":"0.78","Package":"CanF-14","Re Min.(A/W) Responsivity":"1.2","NEP Max.(W/(Hz)1/2)":"1.5p","C(T) Max. (F) Capacitance":"400p"}...
811 Bytes - 19:36:45, 23 November 2024
Aecom.com/J18TE3-66G-R01M1.9
{"Semiconductor Material":"InGaAs","Photosensitive Area (mm2)":"1.0","@Wavelength(m)(Test Condition)":"1.82u","Package":"TO-66var","Re Min.(A/W) Responsivity":"1.0","NEP Max.(W/(Hz)1/2)":"1.8","C(T) Max. (F) Capacitance":"800p"}...
776 Bytes - 19:36:45, 23 November 2024
Aecom.com/J18TE3-66G-R01M2.2
{"Semiconductor Material":"InGaAs","Photosensitive Area (mm2)":"1.0","@Wavelength(m)(Test Condition)":"2.2u","Package":"TO-66var","Re Min.(A/W) Responsivity":"1.1","NEP Max.(W/(Hz)1/2)":"9.0","C(T) Max. (F) Capacitance":"800p"}...
775 Bytes - 19:36:45, 23 November 2024
Aecom.com/J18TE3-66G-R01M2.6
{"Semiconductor Material":"InGaAs","Photosensitive Area (mm2)":"1.0","@Wavelength(m)(Test Condition)":"2.6u","Package":"TO-66var","Re Min.(A/W) Responsivity":"1.2","NEP Max.(W/(Hz)1/2)":".08","C(T) Max. (F) Capacitance":"800p"}...
774 Bytes - 19:36:45, 23 November 2024
Aecom.com/J18TE3-66G-R02M1.9
{"Semiconductor Material":"InGaAs","Photosensitive Area (mm2)":"2.0","@Wavelength(m)(Test Condition)":"1.82u","Package":"TO-66var","Re Min.(A/W) Responsivity":"1.0","NEP Max.(W/(Hz)1/2)":"5.0","C(T) Max. (F) Capacitance":"3.2n"}...
775 Bytes - 19:36:45, 23 November 2024
Aecom.com/J18TE3-66G-R02M2.2
{"Semiconductor Material":"InGaAs","Photosensitive Area (mm2)":"2.0","@Wavelength(m)(Test Condition)":"2.2u","Package":"TO-66var","Re Min.(A/W) Responsivity":"1.1","NEP Max.(W/(Hz)1/2)":"25","C(T) Max. (F) Capacitance":"3.2n"}...
774 Bytes - 19:36:45, 23 November 2024
Aecom.com/J18TE3-66G-R02M2.6
{"Semiconductor Material":"InGaAs","Photosensitive Area (mm2)":"2.0","@Wavelength(m)(Test Condition)":"2.6u","Package":"TO-66var","Re Min.(A/W) Responsivity":"1.2","NEP Max.(W/(Hz)1/2)":".19","C(T) Max. (F) Capacitance":"3.2n"}...
773 Bytes - 19:36:45, 23 November 2024

Documentation and Support

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N3620TE320.pdf0.151Request
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ACTE3CR3.pdf1.161Request
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