{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2V @ 1mA","Package \/ Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"-","Gate Charge (Qg) @ Vgs":"-","Product Photos":"8-SOIC","PCN Assembly\/Origin":"Qualification Supertex Devices 22\/Jul\/2014 Additional Fabrication Site 03\/Sep\/2014 Assembly Site Addition 17\/Feb\/2015 Fab Site Addition 14\/Aug\/2014 Assembly Site Addition 08\/Apr\/2015 Assembly Site Addition 08\/Apr\/2015...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL AND P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"200 V","Transistor Appli...