VQ1001P
0.85 A, 30 V, 1 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

From Supertex, Inc.

StatusDiscontinued
ConfigurationSEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min30 V
Drain Current-Max (Abs) (ID)0.8500 A
Drain Current-Max (ID)0.8500 A
Drain-source On Resistance-Max1 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)35 pF
JESD-30 CodeR-CDIP-T14
JESD-609 Codee0
Mfr Package DescriptionSIDE BRAZED, CERAMIC, DIP-14
Moisture Sensitivity LevelNOT SPECIFIED
Number of Elements4
Number of Terminals14
Operating ModeENHANCEMENT MODE
Operating Temperature-Max150 Cel
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeRECTANGULAR
Package StyleIN-LINE
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)2 W
Pulsed Drain Current-Max (IDM)3 A
Qualification StatusCOMMERCIAL
Sub CategoryFET General Purpose Power
Surface MountNO
Terminal FinishTIN LEAD
Terminal FormTHROUGH-HOLE
Terminal PositionDUAL
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Turn-off Time-Max (toff)30 ns
Turn-on Time-Max (ton)30 ns

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