VP2110ND 120 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
From Supertex, Inc.
| Status | Active |
| Additional Feature | LOW THRESHOLD |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100 V |
| Drain Current-Max (ID) | 0.1200 A |
| Drain-source On Resistance-Max | 12 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 8 pF |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e0 |
| Mfr Package Description | DIE-3 |
| Moisture Sensitivity Level | NOT SPECIFIED |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | P-CHANNEL |
| Qualification Status | COMMERCIAL |
| REACH Compliant | Yes |
| Sub Category | Other Transistors |
| Surface Mount | YES |
| Terminal Finish | TIN LEAD |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
