VP1120N5
1.8 A, 200 V, 5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220

From Supertex, Inc.

StatusDiscontinued
ConfigurationSINGLE
DS Breakdown Voltage-Min200 V
Drain Current-Max (Abs) (ID)1.8 A
Drain Current-Max (ID)1.8 A
Drain-source On Resistance-Max5 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-220AB
JESD-30 CodeR-PSFM-T3
JESD-609 Codee0
Mfr Package DescriptionTO-220, 3 PIN
Moisture Sensitivity LevelNOT SPECIFIED
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT MODE
Operating Temperature-Max150 Cel
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeP-CHANNEL
Power Dissipation-Max (Abs)45 W
Pulsed Drain Current-Max (IDM)7 A
Qualification StatusCOMMERCIAL
Sub CategoryOther Transistors
Surface MountNO
Terminal FinishTIN LEAD
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON

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