VN1110N2 2500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39
From Supertex, Inc.
Status | Discontinued |
Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 100 V |
Drain Current-Max (Abs) (ID) | 2.5 A |
Drain Current-Max (ID) | 2.5 A |
Drain-source On Resistance-Max | 0.7000 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 25 pF |
JEDEC-95 Code | TO-39 |
JESD-30 Code | O-MBCY-W3 |
JESD-609 Code | e0 |
Moisture Sensitivity Level | NOT SPECIFIED |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 Cel |
Package Body Material | METAL |
Package Shape | ROUND |
Package Style | CYLINDRICAL |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation Ambient-Max | 6 W |
Power Dissipation-Max (Abs) | 6 W |
Qualification Status | COMMERCIAL |
Sub Category | FET General Purpose Power |
Surface Mount | NO |
Terminal Finish | TIN LEAD |
Terminal Form | WIRE |
Terminal Position | BOTTOM |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |