VN0550N2
100 mA, 500 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39

From Supertex, Inc.

StatusDiscontinued
Additional FeatureHIGH INPUT IMPEDANCE
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min500 V
Drain Current-Max (Abs) (ID)0.1000 A
Drain Current-Max (ID)0.1000 A
Drain-source On Resistance-Max60 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)5 pF
JEDEC-95 CodeTO-39
JESD-30 CodeO-MBCY-W3
JESD-609 Codee0
Moisture Sensitivity LevelNOT SPECIFIED
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT MODE
Operating Temperature-Max150 Cel
Package Body MaterialMETAL
Package ShapeROUND
Package StyleCYLINDRICAL
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeN-CHANNEL
Power Dissipation Ambient-Max6 W
Power Dissipation-Max (Abs)6 W
Qualification StatusCOMMERCIAL
Sub CategoryFET General Purpose Power
Surface MountNO
Terminal FinishTIN LEAD
Terminal FormWIRE
Terminal PositionBOTTOM
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON

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