TP2535ND
120 mA, 350 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

From Supertex, Inc.

StatusACTIVE
Channel TypeP-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min350 V
Drain Current-Max (ID)0.1200 A
Drain-source On Resistance-Max30 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)25 pF
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialUNSPECIFIED
Package ShapeSQUARE
Package StyleUNCASED CHIP
Surface MountYes
Terminal FinishTIN LEAD
Terminal FormNO LEAD
Terminal PositionUPPER
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

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