DN2625DK6-G
1.1 A, 250 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET

From Supertex, Inc.

StatusACTIVE
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min250 V
Drain Current-Max (ID)1.1 A
Drain-source On Resistance-Max3.5 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package Description5 X 5 MM, 0.90 MM HEIGHT, GREEN, QFN-8
Number of Elements1
Number of Terminals8
Operating ModeDEPLETION
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)3.3 A
Surface MountYes
Terminal FinishMATTE TIN
Terminal FormNO LEAD
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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