SI2307BDS-T1-E3 MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.063Ohm; ID -2.5A; TO-236 (SOT-23); PD 0.75W
From Siliconix / Vishay
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Dimensions | 3.04 x 1.4 x 1.02 mm |
| Forward Diode Voltage | -1.2 V |
| Forward Transconductance | 5 S |
| Height | 1.02 mm |
| Length | 3.04 mm |
| Maximum Continuous Drain Current | -2 A |
| Maximum Drain Source Resistance | 0.13 Ω |
| Maximum Drain Source Voltage | -30 V |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 0.75 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-236 |
| Pin Count | 3 |
| Typical Gate Charge @ Vgs | 9 nC @ -15 V |
| Typical Input Capacitance @ Vds | 380 pF @ -15 V |
| Typical Turn On Delay Time | 9 ns |
| Typical TurnOff Delay Time | 25 ns |
| Width | 1.4 mm |
