SI2301BDS-T1-E3 MOSFET; P-Ch; VDSS -20V; RDS(ON) 0.08Ohm; ID -2.2A; TO-236 (SOT-23); PD 0.7W; VGS +/-8V
From Siliconix / Vishay
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Forward Diode Voltage | -1.2 V |
| Height | 1.02 mm |
| Length | 3.04 mm |
| Maximum Drain Source Resistance | 0.15 Ω |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | TO-236 |
| Pin Count | 3 |
| Typical TurnOff Delay Time | 30 ns |
