SD020-11-21-011 Infrared-Optimized Photodiode
From Silicon Detector Corporation
| @V(R) (V) (Test Condition) | 50 |
| @Wavelength(m)(Test Condition) | 900n |
| C(T) Max. (F) Capacitance | 7.0p |
| Ioff Max.(A) Off-state Current | 2.0n |
| NEP Max.(W/(Hz)1/2) | 0.4f |
| Package | TO-46 |
| Photosensitive Area (mm2) | 12 |
| Re Min.(A/W) Responsivity | 550m |
| Semiconductor Material | Silicon |
| Spectral Response High (m) | 1.1u |
| Spectral Response Low (m) | 300n |
| t(resp) Max.(s) Response Time | 37n |
