PT480E00000F Phototransistor IR Chip Silicon 800nm 2-Pin
From SHARP
Collector Current (DC) | 0.02(A) |
Collector-Emitter Sat Volt (max) | 0.4(V) |
Collector-Emitter Voltage | 35(V) |
Dark Current | 100(nA) |
Emitter-Collector Voltage (Max) | 6(V) |
Fall Time | 3500(ns) |
Half-Intensity Angle | 26(deg) |
Lens Type | Transparent |
Light Current | 6000(uA) |
Mounting | Through Hole |
Number of Elements | 1 |
Operating Temp Range | -25C to 85C |
Operating Temperature Classification | Commercial |
Package Type | Epoxy Resin |
Peak Wavelength | 800(nm) |
Phototransistor Type | Phototransistor |
Pin Count | 2 |
Polarity | NPN |
Power Dissipation | 0.075(W) |
Rad Hardened | No |
Rise Time | 3000(ns) |