PT480E00000F
Phototransistor IR Chip Silicon 800nm 2-Pin

From SHARP

Collector Current (DC) 0.02(A)
Collector-Emitter Sat Volt (max)0.4(V)
Collector-Emitter Voltage35(V)
Dark Current100(nA)
Emitter-Collector Voltage (Max)6(V)
Fall Time3500(ns)
Half-Intensity Angle26(deg)
Lens TypeTransparent
Light Current6000(uA)
MountingThrough Hole
Number of Elements1
Operating Temp Range-25C to 85C
Operating Temperature ClassificationCommercial
Package TypeEpoxy Resin
Peak Wavelength800(nm)
Phototransistor Type Phototransistor
Pin Count2
PolarityNPN
Power Dissipation0.075(W)
Rad HardenedNo
Rise Time3000(ns)

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