PT4800FE000F
Phototransistor Chip 860nm 2-Pin Thin Type

From SHARP

Peak Wavelength860(nm)
Collector Current (DC) 0.02(A)
Collector Current (DC) (Max)0.02 A
Collector-Emitter Sat Volt (max)0.4(V)
Collector-Emitter Voltage35(V)
Dark Current100000(nA)
Emitter-Collector Voltage (Max)6(V)
Fall Time3500(ns)
Half-Intensity Angle70(deg)
Lens TypeBlack
Light Current750(uA)
MountingThrough Hole
Number of Elements1
Operating Temp Range-25C to 85C
Operating Temperature ClassificationCommercial
Package TypeThin Type
Peak Wavelength860(nm)
Phototransistor Type Phototransistor
Pin Count2
PolarityNPN
Power Dissipation0.075(W)
Rad HardenedNo
Rise Time3000(ns)

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