SKT100/06D Silicon Controlled Rectifier
From Semikron
@ t(w) (s) (Test Condition) | 10m |
@I(T) (A) (Test Condition) | 300 |
@Temp. (°C) (Test Condition) | 130 |
I(D) Max. (A) Leakage Current | 30m |
I(GT) Max. (A) | 150m |
I(H) Max.(A) Holding Current | 250m |
I(T) Max.(A) On-state Current | 100± |
I(TSM) Max. (A) | 2.0k |
Military | N |
Package | TO-209varM12 |
V(DRM) Max.(V)Rep.Pk.Off Volt. | 600 |
V(GT) Max.(V) | 3.0 |
V(T) Max. (V) | 1.8 |
dv/dt Min. (V/us) | 500 |
t(q) Typ. (s) | 100u |