SKM75GB124D
Half Bridge IGBT Power Module - With inverse diodes

From Semikron

@I(C) (A) (Test Condition)2.0m
@V(CE) (V) (Test Condition)20
@V(CES) (V) (Test Condition)1.2k
@V(GE) (Test Condition)15
@V(GES) (V) (Test Condition)20
Absolute Max. Power Diss. (W)450
Circuits Per Package1
I(C) Abs.(A) Collector Current100
I(CES) Min. (A)1.0m
I(GES) Max. (A)200n
PackageMODULE-var
V(BR)CES (V)1.2k
V(BR)GES (V)20
V(CE)sat Max.(V)2.85
V(GE)th Max. (V)6.5
t(d)off Max. (s) Off time500n
t(f) Max. (s) Fall time.100n
t(r) Max. (s) Rise time100n
td(on) Max (s) On time delay100n

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