BUK107-50DLT/R N-Channel Enhancement MOSFET - With Input and Overload Protection.
From Philips Semiconductors / NXP Semiconductors
| @I(D) (A) (Test Condition) | 100m |
| @V(DS) (V) (Test Condition) | 50 |
| @V(GS) (V) (Test Condition) | 5.0 |
| Absolute Max. Power Diss. (W) | 1.8 |
| I(D) Abs. Drain Current (A) | 500m |
| I(DSS) Max. (A) | 20u |
| I(DSS) Min. (A) | 1.0u |
| Military | N |
| Package | SOT-223 |
| Thermal Resistance Junc-Amb. | 70 |
| V(BR)DSS (V) | 50 |
| r(DS)on Max. (Ohms) | 200m |
| t(d)off Max. (s) Off time | 3.0u |
| t(f) Max. (s) Fall time. | 6.0u |
| t(r) Max. (s) Rise time | 30u |
| td(on) Max (s) On time delay | 8.0u |
