BLT80T/R
Si NPN Power HF BJT

From Philips Semiconductors / NXP Semiconductors

@Freq. (Hz) (Test Condition)1.0M
@I(C) (A) (Test Condition)150m
@V(CB) (V) (Test Condition)7.5
@V(CBO) (V) (Test Condition)10
@V(CE) (V) (Test Condition)5.0
Absolute Max. Power Diss. (W)2.0
C(obo) (Max) (F)3.5p
I(C) Abs.(A) Collector Current250m
I(CBO) Max. (A)100u
MilitaryN
PackageSOT-223
V(BR)CBO (V)20
V(BR)CEO (V)10
h(FE) Min. Static Current Gain25

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