BFQ67WT/R Bipolar NPN UHF-Microwave Transisitor
From Philips Semiconductors / NXP Semiconductors
@Freq. (Hz) (Test Condition) | 1M |
@I(C) (A) (Test Condition) | 15m |
@V(CBO) (V) (Test Condition) | 5 |
@V(CE) (V) (Test Condition) | 8.0 |
Absolute Max. Power Diss. (W) | 300m |
C(obo) (Max) (F) | 0.7p |
I(C) Abs.(A) Collector Current | 50m |
I(CBO) Max. (A) | 50n |
Military | N |
Noise Figure Max. (dB) | 3 |
Package | SOT-323 |
Power Gain Min. (dB) | 8 |
Semiconductor Material | Silicon |
V(BR)CBO (V) | 20 |
V(BR)CEO (V) | 10 |
f(T) Min. (Hz) Transition Freq | 8G |
h(FE) Max. Current gain. | 100 |
h(FE) Min. Static Current Gain | 60 |