BFG590W/XT/R Bipolar NPN UHF-Microwave Transisitor
From Philips Semiconductors / NXP Semiconductors
| @Freq. (Hz) (Test Condition) | 1G |
| @I(C) (A) (Test Condition) | 1.0m |
| @V(CBO) (V) (Test Condition) | 10 |
| @V(CE) (V) (Test Condition) | 1.0 |
| Absolute Max. Power Diss. (W) | 500m |
| I(C) Abs.(A) Collector Current | 200m |
| I(CBO) Max. (A) | 100n |
| Military | N |
| Noise Figure Max. (dB) | 2 |
| Package | SOT-343 |
| Power Gain Min. (dB) | 7.5 |
| Semiconductor Material | Silicon |
| V(BR)CBO (V) | 20 |
| V(BR)CEO (V) | 15 |
| f(T) Min. (Hz) Transition Freq | 5.0G |
| h(FE) Max. Current gain. | 250 |
| h(FE) Min. Static Current Gain | 60 |
