BFG590T/R Bipolar NPN UHF-Microwave Transisitor
From Philips Semiconductors / NXP Semiconductors
@Freq. (Hz) (Test Condition) | 900M |
@I(C) (A) (Test Condition) | 80m |
@V(CE) (V) (Test Condition) | 5 |
Absolute Max. Power Diss. (W) | 650m |
I(C) Abs.(A) Collector Current | 200m |
Military | N |
Package | SOT-143 |
Power Gain Min. (dB) | 13 |
Semiconductor Material | Silicon |
V(BR)CBO (V) | 20 |
V(BR)CEO (V) | 15 |
f(T) Min. (Hz) Transition Freq | 8G |
h(FE) Max. Current gain. | 250 |
h(FE) Min. Static Current Gain | 60 |