BFG590T/R
Bipolar NPN UHF-Microwave Transisitor

From Philips Semiconductors / NXP Semiconductors

@Freq. (Hz) (Test Condition)900M
@I(C) (A) (Test Condition)80m
@V(CE) (V) (Test Condition)5
Absolute Max. Power Diss. (W)650m
I(C) Abs.(A) Collector Current200m
MilitaryN
PackageSOT-143
Power Gain Min. (dB)13
Semiconductor MaterialSilicon
V(BR)CBO (V)20
V(BR)CEO (V)15
f(T) Min. (Hz) Transition Freq8G
h(FE) Max. Current gain.250
h(FE) Min. Static Current Gain60

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