BC850WT/R Bipolar NPN UHF-Microwave Transisitor
From Philips Semiconductors / NXP Semiconductors
| @Freq. (Hz) (Test Condition) | 1M |
| @I(C) (A) (Test Condition) | 10m |
| @V(CBO) (V) (Test Condition) | 30 |
| @V(CE) (V) (Test Condition) | 5 |
| C(obo) (Max) (F) | 3p |
| I(CBO) Max. (A) | 15n |
| Military | N |
| Noise Figure Max. (dB) | 4 |
| Package | TO-236var |
| Semiconductor Material | Silicon |
| V(BR)CBO (V) | 50 |
| V(BR)CEO (V) | 45 |
| f(T) Min. (Hz) Transition Freq | 100M |
| h(FE) Max. Current gain. | 800 |
| h(FE) Min. Static Current Gain | 200 |
