BC369T/R
Si PNP Lo-Pwr BJT

From Philips Semiconductors / NXP Semiconductors

@I(B) (A) (Test Condition)100m
@I(C) (A) (Test Condition)10m
@V(CBO) (V) (Test Condition)25
@V(CE) (V) (Test Condition)5.0
Absolute Max. Power Diss. (W)800m
I(C) Abs.(A) Collector Current1.0
I(CBO) Max. (A)10u
MilitaryN
PackageTO-92
V(BR)CBO (V)25
V(BR)CEO (V)20
V(CE)sat Max.(V).50
f(T) Min. (Hz) Transition Freq65M
h(FE) Max. Current gain.375
h(FE) Min. Static Current Gain855

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