BC369T/R Si PNP Lo-Pwr BJT
From Philips Semiconductors / NXP Semiconductors
@I(B) (A) (Test Condition) | 100m |
@I(C) (A) (Test Condition) | 10m |
@V(CBO) (V) (Test Condition) | 25 |
@V(CE) (V) (Test Condition) | 5.0 |
Absolute Max. Power Diss. (W) | 800m |
I(C) Abs.(A) Collector Current | 1.0 |
I(CBO) Max. (A) | 10u |
Military | N |
Package | TO-92 |
V(BR)CBO (V) | 25 |
V(BR)CEO (V) | 20 |
V(CE)sat Max.(V) | .50 |
f(T) Min. (Hz) Transition Freq | 65M |
h(FE) Max. Current gain. | 375 |
h(FE) Min. Static Current Gain | 855 |